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IRG8P50N120KDPbF
INSULATED GATE BIPOLAR TRANSISTOR
Description
VCES = 1200V IC = 50A, TC =100°C IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar
Transistor
with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 35A Applications Industrial Motor Drive UPS Solar Inverters Welding G E n-channel GC E GC E IRG8P50N120KDPbF IRG8P50N120KD‐EPbF TO‐247AC TO‐2...
International Rectifier
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IRG8P50N120KDPbF
INSULATED GATE BIPOLAR TRANSISTOR
- International Rectifier
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