IRG8P25N120KDPbF

  IRG8P25N120KDPbF IRG8P25N120KD-EPbF VCES = 1200V IC = 25A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 15A Applications Industrial Motor Drive UPS Solar Inverters Welding G E n-channel G CE G CE IRG8P25N120KDPbF  IRG8P25N120KD‐EPbF  TO‐247AC  TO‐247AD  G Gate C Collector E Emitter Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant Benefits  High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme Excellent Current Sharing in Parallel Operation Rugged Transient Performance Environmentally friendly Base part number IRG8P25N120KDPbF IRG8P25N120KD-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG8P25N120KDPbF IRG8P25N120KD-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current Pulse Collector Current (see fig. 2) Clamped Inductive Load Current (see fig. 3) Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Op...