DatasheetsPDF.com
IRG8P15N120KDPbF
INSULATED GATE BIPOLAR TRANSISTOR
Description
IRG8P15N120KDPbF IRG8P15N120KD-EPbF VCES = 1200V IC = 15A, TC =100°C Insulated Gate Bipolar
Transistor
with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 10A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperatur...
International Rectifier
Download IRG8P15N120KDPbF Datasheet
Similar Datasheet
IRG8P15N120KDPbF
INSULATED GATE BIPOLAR TRANSISTOR
- International Rectifier
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
