IRG8B08N120KDPbF IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
VCES = 1200V IC = 8A, TC =100°C
Insulated Gate Bipolar Transist...
IRG8B08N120KDPbF IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
VCES = 1200V IC = 8A, TC =100°C
Insulated Gate Bipolar
Transistor with Ultrafast Soft Recovery Diode C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 5A
Applications Industrial Motor Drive UPS Solar Inverters Welding
Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant
G
E
n-channel
GCE
TO-220AB IRG8B08N120KDPbF
GCE
TO-247AC IRG8P08N120KDPbF
GC E
TO-247AD IRG8P08N120KD-EPbF
G Gate
C Collector
E Emitter
Benefits High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme Excellent Current Sharing in Parallel Operation Rugged Transient Performance Environmentally friendly
Base part number
IRG8P08N120KDPbF IRG8P08N120KD-EPbF
IRG8B08N120KDPbF
Package Type
TO-247AC TO-247AD TO-220AB
Standard Pack
Form
Quantity
Tube
25
Tube
25
Tube
50
Orderable Part Number
IRG8P08N120KDPbF IRG8P08N120KD-EPbF
IRG8B08N120KDPbF
Absolute Maximum Ratings
Parameter
Max.
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE IFM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current Pulse Collector Current (see fig. 2) Clamped Inductive Load Current (see fig. 3) Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Vo...