INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 μS short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package
Benefits
High Efficiency in a Wide Range of A...
