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ALM-GP001 Dataheets PDF



Part Number ALM-GP001
Manufacturers AVAGO
Logo AVAGO
Description GPS Filter-LNA-Filter Front-End Module
Datasheet ALM-GP001 DatasheetALM-GP001 Datasheet (PDF)

ALM-GP001 GPS Filter-LNA-Filter Front-End Module Data Sheet Description Avago Technologies’ ALM-GP001 is an ultra low-noise GPS front-end module that combines a low-noise amplifier (LNA) with GPS FBAR filters. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity. Noise figure distribution is very tightly controlled. A CMOS-compatible shutdown pin is included either for turning the LNA on/off, or for c.

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ALM-GP001 GPS Filter-LNA-Filter Front-End Module Data Sheet Description Avago Technologies’ ALM-GP001 is an ultra low-noise GPS front-end module that combines a low-noise amplifier (LNA) with GPS FBAR filters. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity. Noise figure distribution is very tightly controlled. A CMOS-compatible shutdown pin is included either for turning the LNA on/off, or for current adjustment. The integrated filter utilizes an Avago Technologies’ leading-edge FBAR filter for exceptional rejection at Cellular, DCS, PCS and WLAN band frequencies. Bypass functionality with an external RF switch is possible with separate RF switching. The low noise figure and high gain, coupled with low current consumption make it suitable for use in critical lowpower GPS applications or during low-battery situations. Component Image Surface Mount (3.0 x 2.5 x 1) mm3 12-lead MCOB RF In (pin 1) Gnd Vsd Gnd (pin 12) (pin 11) (pin 10) Vdd (pin 9) Gnd (pin 2) Gnd (pin 3) GP001 YMXXXX Gnd Gnd Gnd (pin 4) (pin 5) (pin 6) RF Out (pin 8) Gnd (pin 7) TOP VIEW Vdd (pin 9) Gnd Vsd Gnd (pin 10) (pin 11) (pin 12) RF In (pin 1) Features • Operating temperature range -40 to +85 °C • Very Low Noise Figure: 1.26 dB typ. • Exceptional Cell/DCS/PCS/WLAN-Band rejection • Advanced GaAs E-pHEMT & FBAR Technology • Low external component count. • CMOS compatible shutdown pin (SD) • ESD: > 3kV at RFin pin • Adjustable bias current via single external resistor/ voltage • Useable down to 1.8V supply voltage • Small package dimension: 3.0(L)x2.5(W)x1(H) mm3 • Meets MSL3, Lead-free and halogen free Specifications (Typical performance @ 25°C) At 1.575GHz, Vdd = 2.7V, Idd = 7.5mA • Gain = 14.2 dB • NF = 1.26 dB • IIP3 = +5 dBm, IP1dB = +2 dBm • S11 = -9 dB, S22 =-12 dB • Low-Band Rejection (824 – 928MHz): 89 dBc • High-Band Rejection (1710 – 1980MHz): 80 dBc • WLAN-Band Rejection (2400 – 2500MHz): 72 dBc Application • GPS Front-end Module Application Circuit Vdd = +2.7V Vsd C1 C2 RF Out (pin 8) Gnd (pin 2) Gnd (pin 7) Gnd Gnd Gnd (pin 6) (pin 5) (pin 4) Gnd (pin 3) BOTTOM VIEW Note: Package marking provides orientation and identification “GP001” = Product Code “Y” = Year of manufacture “M” = Month of manufacture “XXXX” = Last 4 digit of lot number RFin RFout Attention: Observe precautions for handling electrostatic sensitive devices. RF In (Pin 1) to GND: ESD Human Body Model = 3 kV All other Pins : ESD Machine Model = 50 V : ESD Human Body Model = 300 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Absolute Maximum Rating[1] TA=25°C Symbol Vdd Idd Pin,max Pdiss Tj TSTG Parameter Device Drain to Source Voltage[2] Drain Current[2] CW RF Input Power (Vdd = 2.7V, Idd = 7.5mA) Total Power Dissipation[4] Junction Temperature Storage Temperature Units V mA dBm mW °C °C Absolute Max. 3.6 20 15 72 150 -65 to 150 Thermal Resistance [3] (Vdd = 2.7V, Idd = 7.5mA), θjc = 92°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Thermal resistance measured using Infra-Red measurement technique. 4. Board (module belly) temperature TB is 25°C. Derate 10.87 mW/°C for TB>143°C. Electrical Specifications TA = 25°C, Freq = 1.575GHz, measured on demo board[1] unless otherwise specified – Typical Performance[1] Table 1. Performance at Vdd = Vsd = 2.7V, Idd = 7.5mA (Rbias = 6.8k Ohm) nominal operating conditions Symbol Parameter and Test Condition Units Min. Typ Max. G NF[2] IP1dB IIP3[3] S11 S22 S12 Low Band Rejection High Band Rejection Gain Noise Figure Input 1dB Compressed Power Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz) Input Return Loss Output Return Loss Reverse Isolation Worst-case relative to 1.575GHz within (827-928)MHz band, tested at 928MHz Worst-case relative to 1.575GHz within (1710-1980)MHz band, tested at 1850MHz dB dB dBm dBm dB dB dB dBc dBc 12 – – 0 – – – 79 74 14.2 16.3 1.26 1.7 +2 – +5 – -9 – -12 – -22 – 89 – 80 – WLAN Band Rejection Worst-case relative to 1.575GHz within (2400-2500)MHz band, tested at 2500MHz dBc 67 72 – IP1dB890MHz Input 1dB gain compression interferer signal level at 890MHz dBm – 21 – IP1dB1710MHz Input 1dB gain compression interferer signal level at 1710MHz dBm – 32 – IP1dB1885MHz Input 1dB gain compression interferer signal level at 1885MHz dBm – 37 – IP1dB2500MHz OOB IIP3[4] Input 1dB gain compression interferer signal level at 2500MHz Out of Band Input 3rd Order Intercept Point (2-tone @ 1712.7 MHz and 1850MHz) dBm – dBm – 35 62 – Idd Supply DC current at Shutdown (SD) voltage Vsd = 2.7V mA 4 7.5 15 Ish Shutdown Current @ VSD = 0V uA – 0.5 110 2 Table 2. Performance at Vdd = Vsd = 1.8V, Idd = 5mA (Rbias = 2.7k Ohm) nominal operating conditions Symbol Parameter and Test Condi.


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