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1PS10SB82

NXP

Schottky barrier diode

1PS10SB82 Schottky barrier diode 13 November 2019 Product data sheet 1. General description An epitaxial Schottky barr...


NXP

1PS10SB82

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Description
1PS10SB82 Schottky barrier diode 13 November 2019 Product data sheet 1. General description An epitaxial Schottky barrier diode encapsulated in a SOD882 leadless ultra small plastic package. ESD sensitive device, observe handling precautions. 2. Features and benefits Low forward voltage Low diode capacitance Leadless ultra small plastic package (1.0 mm x 0.6 mm x 0.48 mm) Boardspace 1.17 mm² (approx. 10 % of SOT23) Power dissipation comparable to SOT23 3. Applications UHF mixers Sampling circuits Modulators Phase detectors Mobile devices 4. Quick reference data Table 1. Quick reference data Symbol Parameter VR reverse voltage VF forward voltage Conditions IF = 30 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Min Typ Max Unit - - 15 V - - 700 mV 5. Pinning information Table 2. Pinning information Pin Symbol Description 1K cathode[1] 2A anode [1] The marking bar indicates the cathode. Simplified outline 12 Transparent top view DFN1006-2 (SOD882) Graphic symbol KA aaa-003679 Nexperia 1PS10SB82 Schottky barrier diode 6. Ordering information Table 3. Ordering information Type number Package Name 1PS10SB82 DFN1006-2 Description Version plastic, leadless ultra small package; 2 terminals; 0.65 mm pitch; SOD882 1 mm x 0.6 mm x 0.48 mm body 7. Marking Table 4. Marking codes Type number 1PS10SB82 Marking code S5 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF T...




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