IRLS3813PBF

Application  Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC inverters Benefits  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant IRLS3813PbF HEXFET® Power MOSFET  D VDSS 30V RDS(on) typ. 1.60m G max 1.95m ID (Silicon Limited) 247A S ID (Package Limited) 160A D G Gate S G D2Pak IRLS3813PbF D Drain S Source Base part number Package Type IRLS3813PbF D2-Pak Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Orderable Part Number IRLS3813PbF IRLS3813TRLPbF Absolute Maximum Rating Symbol VDS ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ Parameter Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics  Symbol Parameter EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current Thermal Resistance   Symbol Parameter RJ...