POWER MOSFET
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TC = 25°C)
30 8.4 8.5
65f
V mΩ nC
A
IRLR8721PbF-1
HEXFET® Power MOSFET...
Description
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TC = 25°C)
30 8.4 8.5
65f
V mΩ nC
A
IRLR8721PbF-1
HEXFET® Power MOSFET
DD
G S
S
G D-Pak IRLR8721PbF-1
Features Industry-standard pinout D-Pak
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier
Increased Reliability
Base Part Number IRLR8721PbF-1
Package Type D-Pak
Standard Pack
Form
Quantity
Tape and Reel
2000
Orderable part number IRLR8721TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Max. 30 ± 20
65f 46f
260 65 33
0.43 -55 to + 175
Units V
A
W W/°C
°C
Typ. ––– ––– –––
Max. 2.3 50 110
Units °C/W
Notes through
are on page 12
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
July 30, 2014
IRLR8721PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ΔΒVDSS/ΔTJ RDS(on)
VGS(th) ΔVGS(th)
Drain-to-Source Breakdown Voltage
30 ––– –...
Similar Datasheet