30V P-Channel MOSFET
PD-96899C
IRHYS597Z30CM JANSR2N7519T3
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
P...
Description
PD-96899C
IRHYS597Z30CM JANSR2N7519T3
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number Radiation Level IRHYS597Z30CM 100 kRads(Si) IRHYS593Z30CM 300 kRads(Si)
RDS(on) 0.072 0.072
ID -20A* -20A*
QPL Part Number JANSR2N7519T3 JANSF2N7519T3
30V, P-CHANNEL
REF: MIL-PRF-19500/732
R5 TECHNOLOGY
Low-Ohmic TO-257AA
Description
IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 80 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened Fast Switching Low RDS(on) Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Electrically Isolated Ceramic Eyelets Light Weight ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Parameter
Value
Units
ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current
-20*
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM @TC = 25°C
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gat...
Similar Datasheet