Document
PD-96911A
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
IRHYS597034CM
JANSR2N7520T3 60V, P-CHANNEL
REF: MIL-PRF-19500/732
5 TECHNOLOGY
Part Number IRHNJ597034CM IRHNJ593034CM
Radiation Level 100K Rads (Si) 300K Rads (Si)
RDS(on) 0.08Ω 0.08Ω
ID -20A -20A
QPL Part Number JANSR2N7520T3 JANSF2N7520T3
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Low-Ohmic
Features:
TO-257AA
n Low RDS(on)
n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
n ESD Rating: Class 1C per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt Â
TJ TSTG
Operating Junction Storage Temperature Range Lead Temperature
Weight
Pre-Irradiation
Units
-20 -13 A
-80
75 W
0.6 W/°C
±20 V
134 mJ
-20 A
7.5 mJ
-4.9 V/ns
-55 to 150
°C
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
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1
02/11/15
IRHYS597034CM, JANSR2N7520T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage -60 — —
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.066 — Voltage
V VGS = 0V, ID = -1.0mA V/°C Reference to 25°C, ID = -1.0mA
RDS(on)
Static Drain-to-Source On-State Resistance
— — 0.087 Ω
VGS = -12V, ID = -13A Ã
VGS(th) gfs IDSS
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-2.0 — -4.0 V
10 — —
S
— —
— —
-10 -25
µA
VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -13A Ã VDS= -48V ,VGS = 0V
VDS = -48V, VGS = 0V, TJ = 125°C
— —
— —
-100 100
nA
VGS = -20V VGS = 20V
— — 45 — — 18 nC — — 13
VGS = -12V, ID = -20A VDS = -30V
— — 25
— —
— 65 — 75
ns
VDD = -30V, ID = -20A VGS = -12V, RG = 7.5Ω
— — 50
— 6.8 — nH Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
— 1560 — — 565 —
pF
VGS = 0V, VDS = - 25V f = 1.0MHz
— 62 —
— 6.5 — Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS ISM VSD trr QRR
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
— — -20 A — — -80 — — -5.0 V — — 100 ns — — 200 nC
Tj = 25°C, IS = -20A, VGS = 0V Ã
Tj = 25°C, IF =-20A, di/dt ≤ -100A/µs VDD ≤ -25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA
Junction-to-Case Junction-to-Ambient
Min Typ Max Units
Test Conditions
— —
— —
1.67 80
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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PRraed-IirartaiodniaCtiohnaracteristics
IRHYS597034CM, JANSR2N7520T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100K Rads(Si)1 300KRads(Si)2 Units
Test Conditions
Min Max Min Max
BVDSS VGS(th)
IGSS IGSS IDSS RDS(on)
Drain-to-Source Breakdown Voltage Gate Threshold Voltage .