RADIATION HARDENED POWER MOSFET
PD - 96898
RADIATION HARDENED
IRHYK57133CMSE
POWER MOSFET
130V, N-CHANNEL
5SURFACE MOUNT (Low-Ohmic TO-257AA) TEC...
Description
PD - 96898
RADIATION HARDENED
IRHYK57133CMSE
POWER MOSFET
130V, N-CHANNEL
5SURFACE MOUNT (Low-Ohmic TO-257AA) TECHNOLOGY
Product Summary
Part Number
Radiation Level
IRHYK57133CMSE 100K Rads (Si)
RDS(on) 0.082Ω
ID 20A
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Low-Ohmic TO-257AA
Features:
n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C ID@ VGS = 12V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
TJ TSTG
Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range
Pack. Moun...
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