2N7599T3

PD-95837B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 2N7599T3 IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHY67C30CM 100K Rads (Si) IRHY63C30CM 300K Rads (Si) RDS(on) 3.0Ω 3.0Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. TO-257AA Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor 3.4 2.1 13.6 75 0.6 A W W/°C VGS EAS IAR EAR dv/dt Gate-to-S...