RADIATION HARDENED POWER MOSFET
PD - 93822B
IRHY57230CMSE
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSR2N7489T3 200V, N-CHANNEL REF:MIL-...
Description
PD - 93822B
IRHY57230CMSE
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSR2N7489T3 200V, N-CHANNEL REF:MIL-PRF-19500/705
Product Summary
5 TECHNOLOGY
Part Number
Radiation Level RDS(on) ID QPL Part Number
IRHY57230CMSE 100K Rads (Si) 0.23Ω 12A JANSR2N7489T3
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
12 7.6 A
48
75 W
0.6 W/°C
VGS EAS IAR EAR dv/dt
TJ TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À P...
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