BLU6H0410L-600P; BLU6H0410LS-600P
Power LDMOS transistor
Rev. 2 — 12 July 2013
Product data sheet
1. Product profile
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BLU6H0410L-600P; BLU6H0410LS-600P
Power LDMOS
transistor
Rev. 2 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power
transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.
Table 1. Application information
Typical RF performance at VDS = 50 V; in a common source 860 MHz narrowband test circuit; unless otherwise specified.
Test signal
f
IDq
PL(AV)
PL(M)
Gp
D IMD3
(MHz) (mA) (W)
(W) (dB) (%) (dBc)
pulsed, class-AB [1]
860 1.3 -
600 20 58 -
[1] Measured at = 10 %; tp = 1 ms.
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W High power gain High efficiency Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Power amplifier for radar transmitter applications in the 400 MHz to 900 MHz frequency range
NXP Semiconductors
BLU6H0410L(S)-600P
Power LDMOS
transistor
2. Pinning information
Table 2. Pinning Pin Description BLU6H0410L-600P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLU6H0410LS-600P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
12
1
5
34 [1]
3 5
4
2
sym117
12
1
...