Document
BLS7G3135LS-200
LDMOS S-band radar power transistor
Rev. 2 — 23 September 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Test signal
f (GHz)
VDS
PL
Gp
D tr
tf
(V)
(W) (dB)
(%) (ns)
(ns)
pulsed RF
3.1
32 200 12
48 8
6
3.3
32 200 12
46 8
6
3.5
32 200 12
43 8
6
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for broadband operation Excellent thermal stability Easy power control Integrated ESD protection High flexibility with respect to pulse formats Internally matched for ease of use (input and output) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 3100 MHz to 3500 MHz
NXP Semiconductors
BLS7G3135LS-200
LDMOS S-band radar power transistor
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description drain gate source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1] V\P
Table 3. Ordering information
Type number
Package
Name Description
BLS7G3135LS-200 -
earless flanged ceramic package; 2 leads
Version SOT502B
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Min
VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature
0.5 65 [1] -
[1] Continuous use at maximum temperature will affect the reliability.
Max 65 +13 +150 225
Unit V V C C
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Zth(j-mb) transient thermal impedance from junction to mounting base
Conditions Tcase = 85 C; PL = 200 W
tp = 100 s; = 20 % tp = 200 s; = 20 % tp = 500 s; = 20 %
Typ Unit
0.147 K/W 0.162 K/W 0.186 K/W
BLS7G3135LS-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 September 2013
© NXP B.V. 2013. All rights reserved.
2 of 10
NXP Semiconductors
BLS7G3135LS-200
LDMOS S-band radar power transistor
6. Characteristics
Table 6. DC characteristics Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage
IDSS IDSX IGSS gfs RDS(on)
drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance
VGS = 0 V; ID = 2.7 mA VDS = 10 V; ID = 270 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 2.7 A VGS = VGS(th) + 3.75 V
65 1.5
-
--V 1.9 2.3 V
- 4.2 51 - 420 2.34 0.06 -
A A nA S
Table 7. RF characteristics
Test signal: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit.
Symbol Parameter
Conditions Min Typ Max
Unit
Gp RLin D Pdroop(pulse) tr tf
power gain input return loss drain efficiency pulse droop power rise time fall time
PL = 200 W 8.8 12 -
dB
PL = 200 W -
8 4 dB
PL = 200 W 38 43 -
%
PL = 200 W
0.1 0.25 dB
PL = 200 W - 8 50 ns
PL = 200 W - 6 50 ns
7. Test information
7.1 Ruggedness in class-AB operation
The BLS7G3135LS-200 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 200 W; f = 3100 MHz; tp = 300 s; = 10 %.
7.2 Impedance information
Table 8. Typical impedance Measured load pull data; VDS = 32 V; IDq = 100 mA; typical values unless otherwise specified.
f (MHz)
ZS ()
ZL ()
3100
0.9 j4.3
5.3 j1.6
3200
1.3 j4.9
4.8 j1.5
3300
1.7 j5.5
4.6 j1.9
3400
2.4 j6.4
4.0 j2.1
3500
4.1 j6.9
4.0 j2.1
BLS7G3135LS-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 September 2013
© NXP B.V. 2013. All rights reserved.
3 of 10
NXP Semiconductors
BLS7G3135LS-200
LDMOS S-band radar power transistor
JDWH =6
Fig 1. Definition of transistor impedance
GUDLQ =/
DDI
7.3 Test circuit information
PP
PP
PP
&
5
& &
&
& &
& &
&
&
&
&
DDD
Printed-Circuit Board (PCB): Arlon TC600 with a thickness of 0.64 mm. See Table 9 for list of components.
Fig 2. Component layout
BLS7G3135LS-200
Product data sheet
Table 9. List of components See Figure 2 for component layout.
Component
Description
C1, C4, C4, C10
multilayer ceramic chip capacitor
C2, C5
multilayer ceramic chip capacitor
C3, C9
multilayer ceramic chip capacitor
C7 multilayer ceramic chip capacitor
C8 multilayer ceramic chip capacitor
C11 electrolytic capacitor
R1 .