BLP8G21S-160PV

BLP8G21S-160PV Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1880 to 1920 600 28 20 17.5 31 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz. 1.2 Features and benefits  Designed for broadband operation (1880 MHz to 2025 MHz)  Decoupling leads to enable improved video bandwidth  Excellent ruggedness  High efficiency  Excellent thermal stability  Internally matched for ease of use  High power gain  Integrated ESD protection  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base station and multi-carrier applications in the 1880 MHz to 2025 MHz frequency range NXP Semiconductors BLP8G21S-160PV Power LDMOS transistor 2. Pinning information Table 2. Pin 1, 2 3, 6 4, 5 7 Pinning Description gate decoupling lead drain source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol   [1]         DDD Table 3. Ordering information Type number Package Name Description Versio...