BLP25M710

BLP25M710 Broadband LDMOS driver transistor Rev. 1 — 29 August 2013 Product data sheet 1. Product profile 1.1 General description A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information Test signal f (MHz) IDq (mA) VDS PL Gp (V) (W) (dB) DVB-T 858 110 28 1 20.9 Pulsed RF [3] 2450 80 28 10 16.2 D (%) 17.1 64.5 IMDshldr (dBc) 47.5 [1] - PAR (dB) 9.5 [2] - [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. [3] Measured at  = 10 %, tp = 12 s. 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 2500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLP25M710 Broadband LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin Description 1, 6, 7, 12 n.c. 2, 3 gate1 4, 5 gate2 8, 9 drain2 10, 11 drain1 13 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol     [1] 7UDQVSDUHQWWRSYLHZ     DDD Table 3. Ordering information Type number Package Name De...