BLP10H605

BLP10H605 Broadband LDMOS driver transistor Rev. 3 — 2 October 2014 Product data sheet 1. Product profile 1.1 General description A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1. Application performance Test signal f (MHz) CW 860 VDS PL Gp D (V) (W) (dB) (%) 50 5 22.4 59.6 1.2 Features and benefits  Easy power control  Integrated dual side ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 1400 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLP10H605 Broadband LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin 1, 3, 4, 6, 7, 9, 10, 12 2 5 8 11 13 Description Simplified outline n.c. gate1 gate2 drain2 drain1 source          [1]    7UDQVSDUHQWWRSYLHZ [1] Connected to flange. 3. Ordering information Graphic symbol      DDD Table 3. Ordering information Type number Package Name Description Version BLP10H605 HVSON12 plastic thermal enhanced very thin small outline SOT1352-1 package; no leads; 12 terminals; body 5  6  0.85 mm 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS...