DATA SHEET
DARLINGTON TRASISTOR
2SB1465
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER...
DATA SHEET
DARLINGTON TRASISTOR
2SB1465
PNP SILICON EPITAXIAL
TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SB1465 is a mold power darlington
transistor developed for low-frequency power amplifier and low-speed switching. This
transistor is ideal for use in a direct drive from IC output to relay drivers in switching equipment and pulse motor drivers or relay drivers in such as OA and FA equipments.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Note Base current Total power dissipation (TC = 25°C) Total power dissipation (TA = 25°C) Junction temperature Storage temperature
VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT1 PT2 Tj Tstg
−300 −300
−7 −300 −600 −30
25 2.0 150 −55 to +150
V V V mA mA mA W W °C °C
PACKAGE DRAWING (UNIT: mm)
Note PW ≤ 300 μs, duty cycle ≤ 10%
Electrode Connection 1. Base (B) 2. Collector (C) 3. Emitter (E)
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Document No. D16130EJ2V0DS00 (2nd edition) Date Published November 2006 NS CP(K) Printed in Japan
2002
2SB1465
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol...