PF08107B

PF08107B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-787F (Z) 7th Edition Feb. 2001 Application Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz). For 3.5 V nominal operation Features 2 in / 2 out dual band amplifier Simple external circuit including output matching circuit One power control pin with one band switch High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ High efficiency : 50 % Typ at 35.0 dBm for E-GSM 43 % Typ at 32.0 dBm for DCS1800 Pin Arrangement RF-K-8 8 7G65 G G 12 G 34 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND PF08107B Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage Vdd 8 V Supply current Vctl voltage Idd GSM Idd DCS Vctl 3.5 2 4 A A V Vapc voltage Vapc 4 V Input power Pin 10 dBm Operating case temperature Tc (op) −30 to +100 °C Storage temperature Tstg −30 to +100 °C Output power Pout GSM 5 W Pout DCS 3 W Note: The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz), and the DCS1800-band (1710 to 1785 MHz). Electrical Characteristics for DC (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current Ids   20 µA Vdd = 4.7 V, Vapc = 0 V, Vctl = 0.2 V   300 µA Vdd = 8 V, Vapc = 0 V, Vctl = 0.2 V, Tc = −20 to +70°C Vapc control current Iapc   3 mA ...