P-Channel Enhancement Mode MOSFET
PPJA3415AE
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-4.3A
SOT-23
Features
RD...
Description
PPJA3415AE
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-4.3A
SOT-23
Features
RDS(ON) , VGS@-4.5V, ID@-4.3A<50mΩ RDS(ON) , VGS@-2.5V, ID@-4.0A<58mΩ RDS(ON) , VGS@-1.8V, ID@-2.4A<73mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU
directive Green molding compound as per IEC61249 Std.
Mechanical Data
Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A5AE
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT -20 +8 -4.3 -17.2 1.25 10
-55~150
100
UNITS V V A A W
mW/ oC oC
oC/W
January 22,2015-REV.01
Page 1
PPJA3415AE
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Tur...
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