BLL8H0514L-130; BLL8H0514LS-130
LDMOS driver transistor
Rev. 2 — 9 February 2015
Product data sheet
1. Product profile...
BLL8H0514L-130; BLL8H0514LS-130
LDMOS driver
transistor
Rev. 2 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS
transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Test signal f
tp VDS PL Gp RLin D Pdroop(pulse) tr
(MHz)
(s) (%) (V) (W) (dB) (dB) (%) (dB)
(ns)
tf (ns)
pulsed RF 960 to 1215 128 10 50 130 19 10 54 0
15 8
1200 to 1400 300 10 50 130 17 10 50 0
15 8
1.2 Features and benefits
Easy power control Integrated dual side ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
NXP Semiconductors
BLL8H0514L(S)-130
LDMOS driver
transistor
2. Pinning information
Table 2. Pinning Pin Description BLL8H0514L-130 (SOT1135A) 1 drain 2 gate 3 source
BLL8H0514LS-130 (SOT1135B) 1 drain 2 gate 3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
[1]
V\P
[1]
V\P
Table 3. Ordering information
Type number
Package
Name Description
BLL8H0514L-130 -
flanged ceramic package; 2 moun...
