Document
BLL8H0514-25
Power LDMOS transistor
Rev. 1 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Test signal f
tp VDS PL Gp RLin D Pdroop(pulse) tr
(MHz)
(s) (%) (V) (W) (dB) (dB) (%) (dB)
(ns)
tf (ns)
pulsed RF 960 to 1215 128 10 50 25 21 10 58 0.05
86
1200 to 1400 300 10 50 25 19 10 50 0.05
86
1.2 Features and benefits
Easy power control Integrated dual side ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description drain gate source
[1] Connected to flange.
Simplified outline Graphic symbol
[1]
V\P
NXP Semiconductors
BLL8H0514-25
Power LDMOS transistor
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BLL8H0514-25 -
flanged ceramic package; 2 mounting holes; 2 leads
Version SOT467C
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature
Min 6 65 [1] -
Max 100 +13 +150 225
Unit V V C C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator.
5. Thermal characteristics
Table 5. Symbol Zth(j-c)
Thermal characteristics
Parameter
transient thermal impedance from junction to case
6. Characteristics
Conditions Tcase = 85 C; PL = 25 W
tp = 100 s; = 10 % tp = 200 s; = 10 % tp = 300 s; = 10 % tp = 100 s; = 20 %
Typ Unit
0.86 K/W 1.11 K/W 1.29 K/W 1.15 K/W
Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 630 mA
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 18 mA
IDSS drain leakage current
VGS = 0 V; VDS = 50 V
IDSX drain cut-off current
VGS = VGS(th) + 3.75 V; VDS = 10 V
IGSS gate leakage current
VGS = 11 V; VDS = 0 V
gfs forward transconductance
VDS = 10 V; ID = 18 mA
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 63 mA
Min Typ Max Unit
110 - - V
1.4 1.9 2.4 V
- - 1 A
2.1 2.5 -
A
- - 100 nA
120 150 -
mS
- 1500 2750 m
BLL8H0514-25
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 9 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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