BLL6H1214P2S-250

BLL6H1214P2S-250 LDMOS L-band radar power module Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power module intended for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 1.8 ms;  = 30 %; IDq = 200 mA; Pi = 26 dBm; in a class-AB production test circuit. Test signal f (MHz) VDS PL (V) (W) Gp add tr tf (dB) (%) (ns) (ns) pulsed RF 1195 to 1405 45 190 to 290 27 48 15 5 1.2 Features and benefits  Input/output 50  matched  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1.2 GHz to 1.4 GHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  L-band radar applications in the frequency range 1.2 GHz to 1.4 GHz NXP Semiconductors 2. Pinning information 2.1 Pinning BLL6H1214P2S-250 LDMOS L-band radar power module 5)B,1   5)B287  9'6 9*6  9'6  9*6  DDD Top view. Fig 1. Pin configuration 2.2 Pin description Table 2. Symbol RF_IN RF_OUT VGS1 VDS1 VGS2 VDS2 Pin description Pin 1 2 3 4 5 6 Description RF input RF output gate-source voltage 1 drain-source voltage 1 gate-source voltage 2 drain-source voltage 2 3. Ordering information Table 3. Ordering information Type number Package Name Description BLL6H1214P2S-250 - pallet LDMOS; ...