Power MOSFETs
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFH 26N60Q IXFT 26N60Q...
Description
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFH 26N60Q IXFT 26N60Q
VDSS ID25 RDS(on)
= 600 V = 26 A = 0.25 Ω
trr ≤ 250 ns
Symbol VDSS VDGR V
GS
VGSM I
D25
IDM IAR EAR EAS dv/dt
P D
TJ T
JM
Tstg T
L
Md Weight
Symbol
VDSS VGS(th) IGSS IDSS
R DS(on)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
600 V 600 V
±20 V ±30 V
26 A 104 A
26 A
45 mJ 1.5 J
5 V/ns
360
-55 ... +150 150
-55 ... +150
300
W
°C °C °C
°C
Mounting torque
TO-247
1.13/10 Nm/lb.in.
TO-247 TO-268
6g 4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 250µA VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
600 2.5
V 4.5 V
±200 nA
25 µA 1 mA
0.25 Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
l Low gate charge l International standard packages l Epoxy meet UL 94 V-0, flammability
classification l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Avalanche energy and current rated l Fast intrinsic Rectifier
Advantages
l Easy to mount l Space savings l High pow...
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