KMB054N40IA

SEMICONDUCTOR TECHNICAL DATA KMB054N40IA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. MAXIMUM RATING (Ta=25 Unless otherwise Noted) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage Gate-Source Voltage Drain Current DC@TC=25 Pulsed Drain-Source-Diode Forward Current @TC=25 Drain Power Dissipation @Ta=25 (Note1) (Note2) (Note1) (Note2) VDSS VGSS ID IDP IS PD 40 V 20 V 54 A 100 100 A 45 W 3.1 Maximum Junction Temperature Tj Storage Temperature Range Tstg Thermal Resistance, Junction to Case (Note1) RthJC Thermal Resistance, Junction to Ambient (Note2) RthJA Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1” 1” Pad of 2 oz copper. 150 -55 150 2.8 40 /W /W PIN CONNECTION (TOP VIEW) D 2 2 A C M N G FF 123 K E BD H J DIM MILLIMETERS A 6.6+_0.2 B 6.1+_0.2 PC D 5.34 +_0.3 0.7 +_ 0.2 E 9.3 +_0.3 F 2.3+_ 0.2 G 0.76+_0.1 H 2.3+_0.1 L J 0.5+_ 0.1 K 1.8 +_ 0.2 L 0.5 +_ 0.1 M 1.0 +_ 0.1 N 0.96 MAX P 1.02 +_ 0.3 IPAK(1) Marking Type Name KMB 054N40 IA Lot No 13 1 G 2009. 7. 30 3 S Revision No : ...