KMB054N40DB

SEMICONDUCTOR TECHNICAL DATA KMB054N40DB N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 123 O 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Ta=25 Unless otherwise Noted) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 40 V 20 V Drain Current DC@TC=25 Pulsed Drain-Source-Diode Forward Current (Note1) (Note2) ID IDP IS 54 A 100 100 A @TC=25 Drain Power Dissipation @Ta=25 (Note1) (Note2) PD 45 W 3.1 Maximum Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 Thermal Resistance, Junction to Case (Note1) RthJC 2.8 /W Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1 1 Pad of 2 oz copper. DPAK (1) Marking Type Name KMB 054N40 DB Lot No PIN CONNECTION (TOP VIEW) D 2 2 1 G 2008...