KMB030N30D

SEMICONDUCTOR TECHNICAL DATA KMB030N30D N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. FEATURES VDSS=30V, ID=30A. Low Drain-Source ON Resistance. : RDS(ON)=18m (Max.) @ VGS=10V : RDS(ON)=36m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A C M G FF H DIM MILLIMETERS D J A 6.6 +_ 0.2 B 6.1+_ 0.2 C 5.33 +_ 0.1 D 1.08+_ 0.2 B E 2.92 +_ 0.3 F 2.28+_ 0.1 G 1.1 MAX H 2.3 +_ 0.1 E K J 0.51+_ 0.1 N K 1.01+_ 0.1 L 0.51+_ 0.1 M 0.8 +_ 0.1 L N 1.5+_ 0.2 123 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current DC Pulsed (Note 1) ID * IDP * Source-Drain Diode Current IS Drain Power Dissipation (Tc=25 ) PD * Maximum Junction Temperature Tj Storage Temperature Range Tstg Thermal Resistance, Junction to Case RthJC Thermal Resistance, Junction to Ambient RthJA* * : Surface Mounted on FR4 Board, t 10sec. 30 20 30 75 20 50 150 -55 150 3 50 V V A A W /W /W DPAK (2) D G S 2007. 3. 22 Revision No : 1 1/5 KMB030N30D ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance ON State Drain Current Forward Transconductance Source-Drain Diode Forward Volta...