IXYH30N120C3

1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching IXYP30N120C3 IXYH30N120C3 VCES = 1200V IC110 = 30A VCE(sat)  3.3V tfi(typ) = 88ns Symbol VCES VCGR VGES VGEM IC25 IICCM110 IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-247 Maximum Ratings 1200 1200 V V ±20 V ±30 V 75 A 30 A 145 A 20 A 400 mJ ICM = 60 VCE VCES 500 A W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in 3g 6g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 25 A 750 μA 100 nA 3.3 V 3.7 V TO-220 (IXYP) GC E Tab TO-247 AD (IXYH) G CE G = Gate E = Emitter Tab C = Collector Tab = Collector Features  High Voltage Package  Optimized for Low Switching Losses  Square RBSOA  Positive Thermal Coefficient of Vce(sat)  Avalanche Rated  International Standard Packages Advantages  High Power Density  Low Gate Drive Requirement Applications  High Frequency Power Inverters ...