MBRT30020

Silicon Power Schottky Diode Features High Surge Capability Types from 20 V to 40 V VRRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive MBRT30020 thru MBRT30040R VRRM = 20 V - 40 V IF(AV) = 300 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT30020(R) MBRT30030(R) MBRT30035(R) MBRT30040(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRT30020(R) MBRT30030(R) MBRT30035(R) MBRT30040(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum instantaneous reverse current at rated DC blocking voltage (per leg) Thermal characteristics Thermal resistance, junctioncase (per leg) IF(AV) TC = 125 °C IFSM tp = 8.3 ms, half sine VF IFM = 150 A, Tj = 25 °C Tj = 25 °C IR Tj = 100 °C Tj = 150 °C RΘJC 300 2000 0.70 1 10 30 0.40 300 2000 0.70 1 10 30 0.40 300 2000 0.70 1 10 30 0.40 300 2000 0.70 1 10 30 0.40 A A V mA °C/W www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBRT30020 thru MBRT30040R www.genesicsemi.com/s...