MBRF50080

Silicon Power Schottky Diode Features High Surge Capability Types from 45 V to 100 V VRRM Not ESD Sensitive MBRF50045 thru MBRF500100R VRRM = 45 V - 100 V IF(AV) = 500 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) Maximum forward voltage (per leg) Reverse current at rated DC blocking voltage (per leg) Thermal characteristics Thermal resistance, junctioncase (per leg) IF(AV) IFSM VF IR RΘJC TC = 125 °C tp = 8.3 ms, half sine IFM = 250 A, Tj = 25 °C Tj = 25 °C Tj = 100 °C Tj = 150 °C 500 3500 0.75 1 10 50 0.30 500 3500 0.78 1 10 50 0.30 500 3500 0.84 1 10 50 0.30 500 3500 0.84 1 10 50 0.30 A A V mA °C/W www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBRF50045 thru MBRF500100R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBRF50045 thru MBRF500100R Package dimensions and ter...