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MBRF200150

GeneSiC

Silicon Power Schottky Diode


Description
Silicon Power Schottky Diode Features High Surge Capability Types from 150 V to 200 V VRRM Not ESD Sensitive MBRF200150 thru MBRF200200R VRRM = 150 V - 200 V IF(AV) = 200 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF200150(R) MBRF200200(R) Repetit...



GeneSiC

MBRF200150

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