WLCSP4
PMCM4401VPE
12 V, P-channel Trench MOSFET
29 July 2015
Product data sheet
1. General description
P-channel enh...
WLCSP4
PMCM4401VPE
12 V, P-channel Trench MOSFET
29 July 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
Low threshold voltage Ultra small package: 0.78 × 0.78 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
Battery switch High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
Min Typ Max Unit
- - -12 V
-8 -
8V
[1] - - -4.9 A
- 55 65 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
PMCM4401VPE
12 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
A1 G
gate
A2 S
source
B1 D
drain
B2 S
source
Simplified outline
12 A
B
Transparent top view
WLCSP4 (OLPMCM4401VPE)
Graphic symbol
D
G
S 017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMCM4401VPE
WLCSP4
D...