PESD5V0X2UM

SOT883 PESD5V0X2UM Ultra low capacitance unidirectional double ESD protection diode 3 February 2014 Product data sheet 1. General description Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. 2. Features and benefits Ultra low diode capacitance: Cd = 0.50 pF ESD protection up to 10 kV; IEC61000-4-2 IPPM = 1.5 A; IEC 61643-321 (surge) AEC-Q101 qualified 3. Applications High-speed data lines Portable electronics Communication systems Computers and peripherals 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode Cd diode capacitance VRWM reverse standoff voltage Conditions f = 1 MHz; VR = 0 V [1] Measured from pin 1 or 2 to 3. Min Typ Max Unit [1] - 0.5 0.65 pF - 5V Scan or click this QR code to view the latest information for this product NXP Semiconductors PESD5V0X2UM Ultra low capacitance unidirectional double ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) 3 A common anode Simplified outline 1 3 2 Transparent top view DFN1006-3 (SOT883) Graphic symbol 1 3 2 brb051 6. Ordering information Table 3. Ordering information Type number Package Name PESD5V0X2UM DFN1006-3 Description Version...