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NX5P3001 Dataheets PDF



Part Number NX5P3001
Manufacturers NXP
Logo NXP
Description Bidirectional high-side power switch
Datasheet NX5P3001 DatasheetNX5P3001 Datasheet (PDF)

NX5P3001 Bidirectional high-side power switch for charger and USB-OTG applications Rev. 2.0 — 17 May 2023 Product data sheet 1 General description The NX5P3001 is an advanced bidirectional power switch and ESD-protection device for combined USBOTG and charger port applications. It includes undervoltage lockout, overvoltage lockout and overtemperature protection circuits designed to automatically isolate the power switch terminals when a fault condition occurs. The device features two power s.

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NX5P3001 Bidirectional high-side power switch for charger and USB-OTG applications Rev. 2.0 — 17 May 2023 Product data sheet 1 General description The NX5P3001 is an advanced bidirectional power switch and ESD-protection device for combined USBOTG and charger port applications. It includes undervoltage lockout, overvoltage lockout and overtemperature protection circuits designed to automatically isolate the power switch terminals when a fault condition occurs. The device features two power switch input/output terminals (VBUSI and VBUSO), an open-drain acknowledge output (ACK), an enable input which includes logic level translation (EN) and low capacitance Transient Voltage Suppression (TVS) type ESD-clamps for USB data and ID pins. When EN is set HIGH the device enters a low-power mode, disabling all protection circuits. When used in combined charger and USB-OTG applications the 30 V tolerant VBUSI switch terminal is used as the supply and switch input when charging, for USB-OTG the VBUSO switch terminal is used as the supply and switch input. Designed for operation from 3.2 V to 6.35 V, it is used in battery charging and power domain isolation applications to reduce power dissipation and extend battery life. 2 Features and benefits • 30 V tolerant VBUSI supply pin • Wide supply voltage range from 3.2 V to 6.35 V • Automatic switch operation for charging within the supply range • ISW maximum 3 A continuous current • Low ON resistance: 62 mΩ (typical) at a supply voltage of 5.0 V • 1.8 V control logic input to open the switch • Soft start turn-on slew rate • Protection circuitry – Overtemperature protection – Overvoltage lockout – Undervoltage lockout • ESD protection: – HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV – CDM AEC standard Q100-01 (JESD22-C101E) – IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUSI, D-, D+ and ID • Specified from -40 °C to +85 °C 3 Applications • Smart and feature phones • Tablets, eBooks NXP Semiconductors NX5P3001 Bidirectional high-side power switch for charger and USB-OTG applications 4 Ordering information Table 1. Ordering information Type number Package Temperature range Name NX5P3001UK -40 °C to +85 °C WLCSP12 Description wafer level chip-scale package, 12 bumps; body 1.36 × 1.66 × 0.51 mm (Backside Coating included) 5 Marking Table 2. Marking codes Type number NX5P3001UK Marking code X05P3 6 Functional diagram Version NX5P3001 Figure 1. Logic symbol VBUSI VBUSI DD+ ID EN VBUSO AC K aaa-008646 VBUSO D+ OVLO UVLO UVLO DID CONTROL EN ACK OTP Figure 2. Logic diagram (simplified schematic) aaa-008647 NX5P3001 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 17 May 2023 © 2023 NXP B.V. All rights reserved. 2 / 25 NXP Semiconductors NX5P3001 Bidirectional high-side power switch for charger and USB-OTG applications 7 Pinning information 7.1 Pinning ball A1 index area NX5P3001 1 2 3 A B C D Figure 3. Pin configuration WLCSP12 package aaa-008678 Transparent top view NX5P3001 1 2 3 A VBUSI VBUSI VBUSO B VBUSI VBUSO VBUSO C ACK GND EN Figure 4. Ball mapping for WLCSP12 D D- D+ ID aaa-008679 Transparent top view 7.2 Pin description Table 3. Pin description Symbol VBUSO VBUSI ACK GND EN DD+ ID Pin A3, B2, B3 A1, A2, B1 C1 C2 C3 D1 D2 D3 Description VBUSO (output/input supply) VBUSI (input supply/output) acknowledge condition indicator (open-drain output) ground (0 V) enable input (active LOW) ESD-protection I/O ESD-protection I/O ESD-protection I/O NX5P3001 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 17 May 2023 © 2023 NXP B.V. All rights reserved. 3 / 25 NXP Semiconductors NX5P3001 Bidirectional high-side power switch for charger and USB-OTG applications 8 Functional description Table 4. Function table[1] EN VBUSI VBUSO L < 3.2 V < 3.2 V L 3.2 V < VBUSI < 6.35 V < 3.2 V L < 3.2 V > 3.2 V LX X L > 6.35 V X HX X ACK Z Z Z 0 0 Z Operation mode undervoltage lockout; switch open enabled; switch closed; charging mode enabled; switch closed; OTG mode overtemperature protection; switch open overvoltage lockout; switch open disable; switch open [1] H = HIGH voltage level; L = LOW voltage level, Z = high-impedance OFF-state. 8.1 EN-input A HIGH on EN disables the N-channel MOSFET and all protection circuits putting the device into a low-power mode. A LOW on EN enables the protection circuits and then the N-channel MOSFET. 8.2 Undervoltage lockout When EN is LOW and VBUSI and VBUSO < 3.2 V, the UnderVoltage LockOut (UVLO) circuits disable the Nchannel MOSFET. Once VBUSI or VBUSO > 3.3 V and no other protection circuits are active, the state of the Nchannel MOSFET is controlled by the EN pin. 8.3 Overvoltage lockout When EN is LOW and VBUSI > 6.35 V, the OverVoltage LockOut (OVLO) circuit disables the N-channel MOSFET .


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