Document
NX5P3001
Bidirectional high-side power switch for charger and USB-OTG applications
Rev. 2.0 — 17 May 2023
Product data sheet
1 General description
The NX5P3001 is an advanced bidirectional power switch and ESD-protection device for combined USBOTG and charger port applications. It includes undervoltage lockout, overvoltage lockout and overtemperature protection circuits designed to automatically isolate the power switch terminals when a fault condition occurs.
The device features two power switch input/output terminals (VBUSI and VBUSO), an open-drain acknowledge output (ACK), an enable input which includes logic level translation (EN) and low capacitance Transient Voltage Suppression (TVS) type ESD-clamps for USB data and ID pins.
When EN is set HIGH the device enters a low-power mode, disabling all protection circuits. When used in combined charger and USB-OTG applications the 30 V tolerant VBUSI switch terminal is used as the supply and switch input when charging, for USB-OTG the VBUSO switch terminal is used as the supply and switch input.
Designed for operation from 3.2 V to 6.35 V, it is used in battery charging and power domain isolation applications to reduce power dissipation and extend battery life.
2 Features and benefits
• 30 V tolerant VBUSI supply pin • Wide supply voltage range from 3.2 V to 6.35 V • Automatic switch operation for charging within the supply range • ISW maximum 3 A continuous current • Low ON resistance: 62 mΩ (typical) at a supply voltage of 5.0 V • 1.8 V control logic input to open the switch • Soft start turn-on slew rate • Protection circuitry
– Overtemperature protection – Overvoltage lockout – Undervoltage lockout • ESD protection: – HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV – CDM AEC standard Q100-01 (JESD22-C101E) – IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUSI, D-, D+ and ID • Specified from -40 °C to +85 °C
3 Applications
• Smart and feature phones • Tablets, eBooks
NXP Semiconductors
NX5P3001
Bidirectional high-side power switch for charger and USB-OTG applications
4 Ordering information
Table 1. Ordering information Type number Package
Temperature range Name
NX5P3001UK -40 °C to +85 °C
WLCSP12
Description
wafer level chip-scale package, 12 bumps; body 1.36 × 1.66 × 0.51 mm (Backside Coating included)
5 Marking
Table 2. Marking codes Type number NX5P3001UK
Marking code X05P3
6 Functional diagram
Version NX5P3001
Figure 1. Logic symbol
VBUSI
VBUSI DD+ ID
EN VBUSO
AC K
aaa-008646
VBUSO
D+
OVLO UVLO
UVLO
DID
CONTROL
EN ACK
OTP
Figure 2. Logic diagram (simplified schematic)
aaa-008647
NX5P3001
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.0 — 17 May 2023
© 2023 NXP B.V. All rights reserved.
2 / 25
NXP Semiconductors
NX5P3001
Bidirectional high-side power switch for charger and USB-OTG applications
7 Pinning information
7.1 Pinning
ball A1 index area
NX5P3001
1
2
3
A
B
C
D
Figure 3. Pin configuration WLCSP12 package
aaa-008678
Transparent top view
NX5P3001
1
2
3
A VBUSI VBUSI VBUSO
B VBUSI VBUSO VBUSO
C ACK GND EN
Figure 4. Ball mapping for WLCSP12
D D-
D+
ID
aaa-008679 Transparent top view
7.2 Pin description
Table 3. Pin description Symbol VBUSO VBUSI ACK GND EN DD+ ID
Pin A3, B2, B3 A1, A2, B1 C1 C2 C3 D1 D2 D3
Description VBUSO (output/input supply) VBUSI (input supply/output) acknowledge condition indicator (open-drain output) ground (0 V) enable input (active LOW) ESD-protection I/O ESD-protection I/O ESD-protection I/O
NX5P3001
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.0 — 17 May 2023
© 2023 NXP B.V. All rights reserved.
3 / 25
NXP Semiconductors
NX5P3001
Bidirectional high-side power switch for charger and USB-OTG applications
8 Functional description
Table 4. Function table[1] EN VBUSI
VBUSO
L < 3.2 V
< 3.2 V
L 3.2 V < VBUSI < 6.35 V < 3.2 V
L < 3.2 V
> 3.2 V
LX
X
L > 6.35 V
X
HX
X
ACK Z Z Z 0 0 Z
Operation mode undervoltage lockout; switch open enabled; switch closed; charging mode enabled; switch closed; OTG mode overtemperature protection; switch open overvoltage lockout; switch open disable; switch open
[1] H = HIGH voltage level; L = LOW voltage level, Z = high-impedance OFF-state.
8.1 EN-input
A HIGH on EN disables the N-channel MOSFET and all protection circuits putting the device into a low-power mode. A LOW on EN enables the protection circuits and then the N-channel MOSFET.
8.2 Undervoltage lockout
When EN is LOW and VBUSI and VBUSO < 3.2 V, the UnderVoltage LockOut (UVLO) circuits disable the Nchannel MOSFET. Once VBUSI or VBUSO > 3.3 V and no other protection circuits are active, the state of the Nchannel MOSFET is controlled by the EN pin.
8.3 Overvoltage lockout
When EN is LOW and VBUSI > 6.35 V, the OverVoltage LockOut (OVLO) circuit disables the N-channel MOSFET .