DFN2020MD-6
NX2020N2
30 V, N-channel Trench MOSFET
20 January 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology Very fast ...
