GaAs Monolithic Microwave
CHA5356-QGG
UMS A366878A YYWWG
17.7-23.6GHz Packaged HPA
GaAs Monolithic Microwave IC in SMD leadless package
Descrip...
Description
CHA5356-QGG
UMS A366878A YYWWG
17.7-23.6GHz Packaged HPA
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA5356-QGG is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS compliant SMD package.
UUMUMSMSS AAA3536356866687878AA YYYYWYWWWWWGG
SMU A786863A GWWYY
Output power (dBm)
UMS A368687A YYWWG
Main Features
■ Broadband performances: 17.7-23.6GHz
35
Saturated power
■ 33dBm Pout in saturation
UMS■38dBmOIP3
■ 19dB Gain ■ 30dB power detection dynamic ■ DC bias: Vd=6.0Volt@Id=700mA ■ QGG-QFN5x5 ■ MSL3
34
33
32
31
30
-40 °C
25 °C
85 °C
29
28 17 18 19 20 21 22 23 24
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol Freq Gain Psat OIP3
Parameter Frequency range Linear Gain Saturated Output Power Output IP3
A3687ARef.:DSCHA5356-QGG4273-30Sep14
1/16
Min Typ Max Unit
17.7
23.6 GHz
19 dB
33 dBm
38 dBm
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA5356-QGG
17.7-23.6GHz Packaged HPA
Electrical Characteristics
Tamb.= +25°C, Vd = +6.0V
Symbol
Parameter
Min Typ
Freq
Operating frequency range
...
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