CHA5356-QGG

CHA5356-QGG UMS A366878A YYWWG 17.7-23.6GHz Packaged HPA GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5356-QGG is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS compliant SMD package. UUMUMSMSS AAA3536356866687878AA YYYYWYWWWWWGG SMU A786863A GWWYY Output power (dBm) UMS A368687A YYWWG Main Features ■ Broadband performances: 17.7-23.6GHz 35 Saturated power ■ 33dBm Pout in saturation UMS■38dBmOIP3 ■ 19dB Gain ■ 30dB power detection dynamic ■ DC bias: Vd=6.0Volt@Id=700mA ■ QGG-QFN5x5 ■ MSL3 34 33 32 31 30 -40 °C 25 °C 85 °C 29 28 17 18 19 20 21 22 23 24 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Freq Gain Psat OIP3 Parameter Frequency range Linear Gain Saturated Output Power Output IP3 A3687ARef.:DSCHA5356-QGG4273-30Sep14 1/16 Min Typ Max Unit 17.7 23.6 GHz 19 dB 33 dBm 38 dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5356-QGG 17.7-23.6GHz Packaged HPA Electrical Characteristics Tamb.= +25°C, Vd = +6.0V Symbol Parameter Min Typ Freq Operating frequency range ...