MBR8045R

Silicon Power Schottky Diode Features High Surge Capability Types from 45 V to 100 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR8045 thru MBR80100R VRRM = 45 V - 100 V IF(AV) = 80 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit Repetitive peak reverse voltag RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 50 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) Maximum forward voltage (per leg) Maximum instantaneous reverse current at rated DC blocking voltage (per leg) Thermal characteristics Thermal resistance, junctioncase (per leg) Mounting torque IF(AV) IFSM VF IR RΘJC TC = 125 °C tp = 8.3 ms, half sine IFM = 80 A, Tj = 25 °C Tj = 25 °C Tj = 100 °C Tj = 150 °C 80 1000 0.75 1 10 20 0.50 30 80 1000 0.78 1 10 20 0.50 30 80 1000 0.84 1 10 20 0.50 30 80 1000 0.84 1 10 20 A A V mA 0.50 30 °C/W Inch ponds (in-pb) www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 M...