GKR240-04

Silicon Standard Recovery Diode Features High Surge Capability Types from 400 V to 1800 V VRRM Equivalent to SKR240 Series Not ESD Sensitive GKR240/04 thru GKR240/18 VRRM = 400 V - 1800 V IF = 320 A DO-9 Package 21 2 1 GKR Maximum ratings, at Tj = 25 °C, unless otherwise specified (GKN has leads reversed) Parameter Symbol Conditions GKR240/04 GKR240/08 GKR240/12 GKR240/14 GKR240/16GKR240/18 Unit Repetitive peak reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VDC IF TC ≤ 100 °C 400 400 320 IF,SM TC = 25 °C, tp = 10 ms 6000 Tj -55 to 150 Tstg -55 to 150 800 800 320 6000 -55 to 150 -55 to 150 1200 1200 320 6000 -55 to 150 -55 to 150 1400 1400 320 6000 -55 to 150 -55 to 150 1600 1600 320 1800 1800 320 6000 6000 -55 to 150 -55 to 150 -55 to 150 -55 to 150 V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions GKR240/04 GKR240/08 GKR240/12 GKR240/14 GKR240/16GKR240/18 Unit Diode forward voltage Reverse current VF IF = 60 A, Tj = 25 °C 1.4 1.4 1.4 1.4 1.4 1.4 V IR VR = VRRM, Tj = 25 °C 60 60 60 60 60 60 mA Thermal characteristics Thermal resistance, junction case RthJC 0.20 0.20 0.20 0.20 0.20 0.20 K/W www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 GKR240/04 thru GKR240/18 Fig 1: Forward Characteristics Fig 2: Forward Current vs Case Temp ...