2SD667

UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL  DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEATURES * Low frequency power amplifier  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD667L-x-AE3-R 2SD667G-x-AE3-R SOT-23 2SD667L-x-T9N-B 2SD667G-x-T9N-B TO-92NL 2SD667L-x-T9N-K 2SD667G-x-T9N-K TO-92NL Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC ECB ECB Packing Tape Reel Tape Box Bulk  MARKING SOT-23 TO-92NL www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 4 QW-R211-019.G 2SD667 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 120 V Collector to Emitter Voltage Emitter to Base Voltage VCEO VEBO 80 6 V V Collector Current Collector Peak Current (Note2) IC 1.0 A ICP 2.0 A Collector Power Dissipation SOT-23 TO-92NL PC 0.35 0.9 W W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤10ms, Duty cycle≤20%.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector to Base Breakdown Voltag...