SQJ850EP

www.vishay.com SQJ850EP Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration PowerPAK® SO-8L Single 60 0.023 0.032 24 Single D FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC 6.15 mm 4 G 3 S 2 S 1 S D 5.13 mm G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SQJ850EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb TC = 25 °C TC = 125 °C ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f TJ, Tstg LIMIT 60 ± 20 24 17 24 96 15 11 45 15 - 55 to + 175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 70 °C/W RthJC 3.3 Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. e. See solder profile (www...