Automotive N-Channel MOSFET
www.vishay.com
SQM200N04-1m8
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) R...
Description
www.vishay.com
SQM200N04-1m8
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package
40 0.0018
200 Single TO-263-7L
TO-263 7-Lead
FEATURES TrenchFET® power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified d Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D
Top View
D G
S
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Continuous Source Current (Diode Conduction) a
TC = 25 °C a TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
Operating Junction and Storage Temperature Range
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 40 ± 20 200 192 200 600 85 361 375 125
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain)
PCB Mount c
Notes
a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing.
SYMBOL RthJA RthJC
LIMIT 40 0.4
UNIT V
A
mJ W °C
UNIT °C/W
S15-1874-Rev. B, 10-Aug-15
1
Document Number: 67184
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. ...
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