SQJ940EP

www.vishay.com SQJ940EP Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 40 40 0.0160 0.0064 0.0188 0.0076 15 18 Dual N FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8L Asymmetric 6.15mm 4 G2 3 S2 2 G1 5.13mm D2 D1 1 S1 Bottom View D1 D2 G1 G2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L Dual Asymmetric SQJ940EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 40 40 ± 20 15 18 15 10.5 15 39 60 72 20.5 35.5 21 63 48 43 16 14 - 55 to + 175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA RthJC 70 3.3 70 °C/W 3.5 ...