SQJ433EP

www.vishay.com SQJ433EP Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) Configuration Package -30 0.0081 0.0170 -75 Single PowerPAK SO-8L FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested AEC-Q101 qualified c Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8L Single S 6.15 mm 1 Top View 5.13 mm D 1 2S 3S 4S G Bottom View G D P-Channel MOSFET ABSOLUE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation a TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TJ, Tstg LIMIT -30 ± 20 -75 -45 -75 -200 -40 70 83 27 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient Junction-to-Case (Drain) PCB Mount b RthJA 65 °C/W RthJC 1.8 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadle...