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3DU5C
Metal Encapsulated Silicon Phototransistor
Description
3DU5C Metal Encapsulated Silicon Photo
transistor
Dimension Specification
NPN
Silicon Photo
transistor
;Model : 3DU5C Working Voltage(Max.) : 10V; Reverse Breakdown Voltage : 15V; Dark Current : 0.3uA Photocurrent : 0.5-1mA; Power Consumption : 30mW; Peak Wavelength : 880nM Body Size : 7 x 5mm/ 0.28" x 0.2"(L*D); Total Length : 28mm/ 1.1"; E...
ETC
Download 3DU5C Datasheet
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