Document
Data Sheet
Schottky Barrier Diode
RB751VM-40
lApplications High speed switching
lDimensions (Unit : mm)
1.25±0.1
0.1±0.1 0.05
lLand size figure (Unit : mm) 0.9MIN.
1.7±0.1 2.5±0.2
0.8MIN. 2.1
lFeatures 1)Ultra small mold type. (UMD2) 2)Low IR 3)High reliability
lConstruction Silicon epitaxial
0.3±0.05
ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A
dot (year week factory)
0.7±0.2 0.1
UMD2 lStructure
lTaping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ 1.55±0.05
0.3±0.1
3.5±0.05 1.75±0.1 2.75
8.0±0.2 2.8±0.1
lAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current
VRM VR Io
Forward current surge peak (60Hz・1cyc)
Junction temperature
IFSM Tj
Storage temperature
Tstg
1.40±0.1
4.0±0.1
φ 1.05
Limits 40 30 30 200 150
-40 to +150
Unit V V mA mA °C °C
1.0±0.1
lElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage Reverse current
VF IR -
- 0.37 - 0.5
Capacitance between terminals
Ct
-
2
-
Unit Conditions
V IF=1mA μA VR=30V pF VR=1V , f=1MHz
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1/3
2011.06 - Rev.A
RB751VM-40
Data Sheet
FORWARD CURRENT:IF(mA)
FORWARD VOLTAGE:VF(mV)
100 Ta=125℃
10 Ta=75℃
1
0.1
Ta=-25℃ Ta=25℃
REVERSE CURRENT:IR(uA)
1000 100 10 1 0.1 0.01
0.01 0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
320 310 Ta=25℃
IF=1mA n=30pcs 300
290
280 AVE:282.4mV
270
260
250
REVERSE CURRENT:IR(nA)
0.001 0
1000 900 800 700 600 500 400 300 200 100 0
VF DISPERSION MAP 20
30
REVERSE RECOVERY TIME:trr(ns)
Ifsm 1cyc
25
15
8.3ms
20
10 15
5 AVE:3.24A
0 IFSM DISPERSION MAP
10 5 0
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃
10 1
f=1MHz
10 20
REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS
30
Ta=25℃
VR=30V n=30pcs
AVE:245.0nA
IR DISPERSION MAP
IF=0.1A IR=0.1A Irrr=0.1*IR
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
0.1 0
10 9 8 7 6 5 4 3 2 1 0
10
AVE:7.7ns
5
10 20
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
30
Ta=25℃
f=1MHz VR=1V n=10pcs
AVE:2.1pF
Ct DISPERSION MAP
Ifsm 8.3ms 8.3ms 1cyc
PEAK SURGE FORWARD CURRENT:IFSM(A)
trr DISPERSION MAP
0 1 10 100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
20 1000 0.05
Mounted on epoxy board
Rth(j-a)
Ifsm 15 t
Rth(j-c)
0.04
D=1/2
100 0.03 Sin(θ=180)
10
FORWARD POWER DISSIPATION:Pf(W)
0.02
10 DC
5 0.01
0 0.1
1 10
TIME:t(ms) IFSM-t CHARACTERISTICS
1 100 0.001
0.1
0.00
10
1000
0.00 0.01 0.02 0.03 0.04 0.05
TIME:t(s) Rth-t CHARACTERISTICS
AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
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2/3
2011.06 - Rev.A
RB751VM-40
Data Sheet
REVERSE POWER DISSIPATION:PR (W)
0.01
0.008
0.006 0.004 0.002
D=1/2 DC
Sin(θ=180)
0 0 10 20 30
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.1 0.08 0.06 DC 0.04 D=1/2
0A Io
0V t
VR
D=t/T
VR=15V
T Tj=150℃
0.02
Sin(θ=180)
0 0 25 50 75 100 125 150
AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta)
5
4.5
4
3.5
3 2.5 AVE:3.34kV
2 AVE:0.418kV
1.5
1
0.5
0
C=200pF
C=100pF
R=0Ω
R=1.5kΩ
ESD DISPERSION MAP
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.10
0.08
0.06
DC
0.04
D=1/2
0A Io
0V t
VR D=t/T
T TVjR==11550V℃
0.02
Sin(θ=180)
0.00 0
25 50 75 100 125 150
CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc)
ELECTROSTATIC DISCHARGE TEST ESD(KV)
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3/3
2011.06 - Rev.A
Notes
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