DFN2020-6
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
15 May 2013
Product data sheet
1. General de...
DFN2020-6
PMC85XP
30 V P-channel MOSFET with pre-biased
NPN transistor
15 May 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect
Transistor (FET) in Trench MOSFET technology and
NPN Resistor-Equipped
Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Trench MOSFET technology
NPN transistor built-in bias resistors Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction
3. Applications
Charging switch for portable devices High-side load switch USB port overvoltage protection Power management in battery-driven portables Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
P-channel Trench MOSFET
VDS drain-source voltage Tj = 25 °C
- - -30 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.4 A
P-channel Trench MOSFET; static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C resistance
- 85 110 mΩ
NPN RET
VCEO
collector-emitter voltage
Tamb = 25 °C; open base
- - 50 V
IO output current
- - 100 mA
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NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased
NPN transistor
Symbol
NPN RET R1 R2
Par...