RJK0822SPN

RJK0822SPN Silicon N Channel Power MOS FET Power Switching Features Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is designed for Electric Bike (E-Bike) application in China market. Rev.1.00, September.26.2007, page 1 of 7 RJK0822SPN Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VGSS ID ID(pulse)Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C Ratings 80 ±20 80 320 80 100 150 –55 to +150 Unit V V A A A W °C °C Rev.1.00, September.26.2007, page 2 of 7 RJK0822SPN Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 80 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance IGSS IDSS VGS(off) RDS(on) — — 2 — Forward transfer admittance Input capacitance |yfs| Ciss 53 — Output capacitance Coss — Reverse transfer capacitance Crss — Gate Resistance Rg — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Bod...