KF3N40D

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 2.2A Drain-Source ON Resistance : RDS(ON)=3.4 Qg(typ.) =4.4nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current @TC=25 @TC=100 ID Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) IDP EAS EAR dv/dt Drain Power Dissipation TC=25 Derate above25 PD Maximum Junction Temperature Tj Storage Temperature Range Tstg Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA RATING 400 30 2.2 1.4 6* 52 3 4.5 40 0.32 150 -55 150 3.1 110 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W KF3N40D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF3N40D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN 123 1. GATE 2. DRAIN 3. SOURCE DPAK (1) KF3N40I AH CJ BD M N G FF 123 K E P L 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H J K L M N P...